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? semiconductor components industries, llc, 2005 january, 2005 ? rev. 11 1 publication order number: mun2211t1/d mun2211t1 series preferred devices bias resistor transistors npn silicon surface mount transistors with monolithic bias resistor network this new series of digital transistors is designed to replace a single device and its external resistor bias network. the brt (bias resistor transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base ? emitter resistor. the brt eliminates these individual components by integrating them into a single device. the use of a brt can reduce both system cost and board space. the device is housed in the sc ? 59 package which is desi gned for low power surface mount applications. ? simplifies circuit design ? reduces board space ? reduces component count ? moisture sensitivity level: 1 ? esd rating ? human body model: class 1 esd rating ? machine model: class b ? the sc ? 59 package can be soldered using wave or reflow. the modified gull ? winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. ? available in 8 mm embossed tape and reel use the device number to order the 7 inch/3000 unit reel. ? pb ? free packages are available maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc thermal characteristics characteristic symbol max unit total device dissipation t a = 25 c derate above 25 c p d 230 (note 1) 338 (note 2) 1.8 (note 1) 2.7 (note 2) mw c/w thermal resistance ? junction-to-ambient r ja 540 (note 1) 370 (note 2) c/w thermal resistance ? junction-to-lead r jl 264 (note 1) 287 (note 2) c/w junction and storage temperature range t j , t stg ? 55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. fr ? 4 @ minimum pad. 2. fr ? 4 @ 1.0 x 1.0 inch pad. sc ? 59 case 318d style 1 preferred devices are recommended choices for future use and best overall value. npn silicon bias resistor transistors 3 1 2 pin 3 collector (output) pin 1 emitter (ground) pin 2 base (input) r 1 r 2 marking diagram 8x = specific device code* m = date code 8x m device marking information *see specific marking information in the device marking table on page 2 of this data sheet. http://onsemi.com see detailed ordering and shipping information in the package dimensions sect ion on page 2 of this data sheet. ordering information
mun2211t1 series http://onsemi.com 2 device marking and resistor values device package marking r1 (k) r2 (k) shipping ? mun2211t1 sc ? 59 8a 10 10 3000/tape & reel mun2211t1g sc ? 59 (pb ? free) 8a 10 10 3000/tape & reel mun2212t1 sc ? 59 8b 22 22 3000/tape & reel mun2212t1g sc ? 59 (pb ? free) 8b 22 22 3000/tape & reel mun2213t1 sc ? 59 8c 47 47 3000/tape & reel mun2213t1g sc ? 59 (pb ? free) 8c 47 47 3000/tape & reel mun2214t1 sc ? 59 8d 10 47 3000/tape & reel mun2214t1g sc ? 59 (pb ? free) 8d 10 47 3000/tape & reel mun2215t1 (note 3) sc ? 59 8e 10 3000/tape & reel mun2215t1g (note 3) sc ? 59 (pb ? free) 8e 10 3000/tape & reel mun2216t1 (note 3) sc ? 59 8f 4.7 3000/tape & reel mun2216t1g (note 3) sc ? 59 (pb ? free) 8f 4.7 3000/tape & reel mun2230t1 (note 3) sc ? 59 8g 1.0 1.0 3000/tape & reel mun2231t1 (note 3) sc ? 59 8h 2.2 2.2 3000/tape & reel mun2232t1 (note 3) sc ? 59 8j 4.7 4.7 3000/tape & reel mun2232t1g (note 3) sc ? 59 (pb ? free) 8j 4.7 4.7 3000/tape & reel mun2233t1 (note 3) sc ? 59 8k 4.7 47 3000/tape & reel mun2233t1g (note 3) sc ? 59 (pb ? free) 8k 4.7 47 3000/tape & reel mun2234t1 (note 3) sc ? 59 8l 22 47 3000/tape & reel mun2236t1 sc ? 59 8n 100 100 3000/tape & reel mun2237t1 sc ? 59 8p 47 22 3000/tape & reel mun2237t1g sc ? 59 (pb ? free) 8p 47 22 3000/tape & reel mun2240t1 (note 3) sc ? 59 8t 47 3000/tape & reel mun2241t1 (note 3) sc ? 59 8u 100 3000/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. 3. new devices. updated curves to follow in subsequent data sheets.
mun2211t1 series http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector-base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector-emitter cutoff current (v ce = 50 v, i b = 0) i ceo ? ? 500 nadc emitter-base cutoff current mun2211t1 (v eb = 6.0 v, i c = 0) mun2212t1 mun2213t1 mun2214t1 mun2215t1 mun2216t1 mun2230t1 mun2231t1 mun2232t1 mun2233t1 mun2234t1 mun2236t1 mun2237t1 mun2240t1 mun2241t1 i ebo ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.05 0.13 0.2 0.1 madc collector-base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector-emitter breakdown voltage (note 4) (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc on characteristics (note 4) dc current gain mun2211t1 (v ce = 10 v, i c = 5.0 ma) mun2212t1 mun2213t1 mun2214t1 mun2215t1 mun2216t1 mun2230t1 mun2231t1 mun2232t1 mun2233t1 mun2234t1 mun2236t1 mun2237t1 mun2240t1 mun2241t1 h fe 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 160 160 60 100 140 140 350 350 5.0 15 30 200 150 150 140 350 350 ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? collector-emitter saturation voltage (i c = 10 ma, i b = 0.3 ma) (i c = 10 ma, i b = 5 ma) mun2230t1/mun2231t1 (i c = 10 ma, i b = 1 ma) mun2215t1/mun2216t1/ mun2232t1/mun2233t1/mun2234t1 v ce(sat) ? ? 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) mun2211t1 mun2212t1 mun2214t1 mun2215t1 mun2216t1 mun2230t1 mun2231t1 mun2232t1 mun2233t1 mun2234t1 (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k ) mun2213t1 mun2240t1 (v cc = 5.0 v, v b = 5.5 v, r l = 1.0 k ) mun2236t1 (v cc = 5.0 v, v b = 4.0 v, r l = 1.0 k ) mun2237t1 (v cc = 5.0 v, v b = 5.0 v, r l = 1.0 k ) mun2241t1 v ol ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 vdc 4. pulse test: pulse width < 300 s, duty cycle < 2.0%.
mun2211t1 series http://onsemi.com 4 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit on characteristics (note 5) (continued) output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) (v cc = 5.0 v, v b = 0.050 v, r l = 1.0 k ) mun2230t1 (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k ) mun2215t1 mun2216t1 mun2233t1 mun2240t1 v oh 4.9 ? ? vdc input resistor mun2211t1 mun2212t1 mun2213t1 mun2214t1 mun2215t1 mun2216t1 mun2230t1 mun2231t1 mun2232t1 mun2233t1 mun2234t1 mun2235t1 mun2236t1 mun2237t1 mun2240t1 mun2241t1 r 1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 70 70 32.9 32.9 70 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 100 100 47 47 100 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 130 130 61.1 61.1 100 k resistor ratio mun2211t1/mun2212t1/mun2213t1/ mun2236t1 mun2214t1 mun2215t1/mun2216t1/mun2240t1/ mun2241t1 mun2230t1/mun2231t1/mun2232t1 mun2233t1 mun2234t1 mun2237t1 r 1 /r 2 0.8 0.17 ? 0.8 0.055 0.38 1.7 1.0 0.21 ? 1.0 0.1 0.47 2.1 1.2 0.25 ? 1.2 0.185 0.56 2.6 5. pulse test: pulse width < 300 s, duty cycle < 2.0%. figure 1. derating curve 350 200 150 100 50 0 ? 50 0 50 100 150 t a , ambient temperature ( c) r ja = 370 c/w 250 p d , power dissipation (mw) 300
mun2211t1 series http://onsemi.com 5 typical electrical characteristics ? mun2211t1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain figure 2. v ce(sat) versus i c 10 02030 i c , collector current (ma) 10 1 0.1 v o = 0.2 v t a =?25 c 75 c 25 c 40 50 figure 3. dc current gain figure 4. output capacitance 1 0.1 0.01 0.001 0204060 80 i c , collector current (ma) v ce(sat) , maximum collector voltage (volts ) 1000 100 10 1 10 100 i c , collector current (ma) t a =75 c 25 c ?25 c t a =?25 c 25 c i c /i b = 10 figure 5. output current versus input voltage 75 c 25 c t a =?25 c 100 10 1 0.1 0.01 0.001 01 2 34 v in , input voltage (volts) 5678910 figure 6. input voltage versus output current 50 010203040 4 3 1 2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 75 c v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v
mun2211t1 series http://onsemi.com 6 typical electrical characteristics ? mun2212t1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain figure 7. v ce(sat) versus i c figure 8. dc current gain figure 9. output capacitance figure 10. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c ?25 c 100 10 1 100 75 c 25 c 100 0 v in , input voltage (volts) 10 1 0.1 0.01 0.001 246 810 t a =?25 c 0 i c , collector current (ma) 100 v o = 0.2 v t a =?25 c 75 c 10 1 0.1 10 20 30 40 50 25 c figure 11. input voltage versus output current 0.001 v ce(sat) , maximum collector voltage (volts) 25 c i c /i b = 10 0.01 0.1 1 40 i c , collector current (ma) 020 6080 50 010203040 4 3 2 1 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v t a =?25 c 75 c
mun2211t1 series http://onsemi.com 7 typical electrical characteristics ? mun2213t1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain figure 12. v ce(sat) versus i c 0246810 100 10 1 0.1 0.01 0.001 v in , input voltage (volts) t a =?25 c 75 c 25 c figure 13. dc current gain figure 14. output capacitance 100 10 1 0.1 010 2030 40 50 i c , collector current (ma) figure 15. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c ?25 c 100 10 1 100 figure 16. input voltage versus output current 0204060 80 10 1 0.1 0.01 i c , collector current (ma) t a =?25 c 25 c 75 c v ce(sat) , maximum collector voltage (volts ) t a =?25 c 25 c 75 c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10
mun2211t1 series http://onsemi.com 8 typical electrical characteristics ? mun2214t1 10 1 0.1 01020304050 100 10 1 0246810 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8101520253035404550 v r , reverse bias voltage (volts) v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain figure 17. v ce(sat) versus i c i c , collector current (ma) 020406080 v ce(sat) , maximum collector voltage (volts) figure 18. dc current gain 1 10 100 i c , collector current (ma) figure 19. output capacitance figure 20. output current versus input voltage v in , input voltage (volts) c ob , capacitance (pf) figure 21. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 0.001 ?25 c 25 c t a =75 c v ce = 10 300 250 200 150 100 50 0 2468 1520405060708090 f = 1 mhz l e = 0 v t a = 25 c t a =?25 c 25 c 75 c i c /i b = 10 75 c 25 c t a =?25 c v o = 5 v v o = 0.2 v t a =?25 c 25 c 75 c
mun2211t1 series http://onsemi.com 9 typical electrical characteristics ? mun2236t1 100 1 0.1 010203035 5 100 10 0510 4 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 v r , reverse bias voltage (volts) figure 22. v ce(sat) versus i c i c , collector current (ma) 010203040 figure 23. dc current gain 0.1 1 100 i c , collector current (ma) figure 24. output capacitance figure 25. output current versus input voltage v in , input voltage (volts) figure 26. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 v ce = 10 v 1000 100 10 10 f = 1 mhz l e = 0 v t a = 25 c t a = ? 25 c 25 c 75 c 75 c 25 c t a = ? 25 c v o = 5 v v o = 0.2 v t a = ? 25 c 25 c 75 c v ce(sat) , collector voltage (volts) i c /i b = 10 h fe , dc current gain t a = ? 25 c 25 c 75 c c ob , capacitance (pf) 5 4.5 15 20 25 30 35 40 1 0.1 i c , collector current (ma) 15 25 10 v in , input voltage (volts) 5152535
mun2211t1 series http://onsemi.com 10 typical electrical characteristics ? mun2237t1 100 1 010203040 5 100 10 024 1.4 1 0.6 0.2 0 0 5 10 15 20 25 30 35 40 45 v r , reverse bias voltage (volts) figure 27. v ce(sat) versus i c i c , collector current (ma) 010203040 figure 28. dc current gain 1 100 i c , collector current (ma) figure 29. output capacitance figure 30. output current versus input voltage v in , input voltage (volts) figure 31. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 v ce = 10 v 1000 100 1 10 f = 1 mhz l e = 0 v t a = 25 c t a = ? 25 c 25 c 75 c 75 c 25 c t a = ? 25 c v o = 5 v v o = 0.2 v t a = ? 25 c 25 c 75 c v ce(sat) , collector voltage (volts) i c /i b = 10 h fe , dc current gain t a = ? 25 c 25 c 75 c c ob , capacitance (pf) 1.8 6 8 10 12 14 16 1 0.001 i c , collector current (ma) 15 25 10 v in , input voltage (volts) 5152535 10 1.6 1.2 0.8 0.4 2 0.1 0.01 35
mun2211t1 series http://onsemi.com 11 typical applications for npn brts load +12 v figure 32. level shifter: connects 12 or 24 volt circuits to logic in out v cc isolated load from p or other logic +12 v figure 33. open collector inverter: inverts the input signal figure 34. inexpensive, unregulated current source
mun2211t1 series http://onsemi.com 12 package dimensions sc ? 59 case 318d ? 04 issue f s g h d c b l a 1 3 2 j k dim a min max min max inches 2.70 3.10 0.1063 0.1220 millimeters b 1.30 1.70 0.0512 0.0669 c 1.00 1.30 0.0394 0.0511 d 0.35 0.50 0.0138 0.0196 g 1.70 2.10 0.0670 0.0826 h 0.013 0.100 0.0005 0.0040 j 0.09 0.18 0.0034 0.0070 k 0.20 0.60 0.0079 0.0236 l 1.25 1.65 0.0493 0.0649 s 2.50 3.00 0.0985 0.1181 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. style 1: pin 1. emitter 2. base 3. collector 2.4 0.094 0.95 0.037 0.95 0.037 1.0 0.039 0.8 0.031 mm inches scale 10:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2 ? 9 ? 1 kamimeguro, meguro ? ku, tokyo, japan 153 ? 0051 phone : 81 ? 3 ? 5773 ? 3850 mun2211t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082 ? 1312 usa phone : 480 ? 829 ? 7710 or 800 ? 344 ? 3860 toll free usa/canada fax : 480 ? 829 ? 7709 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.

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